2ED21834S06J driver equivalent, 650v half-bridge gate driver.
* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operatio.
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendat.
The 2ED2183(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with ca.
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