logo

1ED3140MU12F Datasheet, Infineon

1ED3140MU12F driver equivalent, single-channel 3kv (rms) isolated gate driver.

1ED3140MU12F Avg. rating / M : 1.0 rating-12

datasheet Download

1ED3140MU12F Datasheet

Features and benefits


* Single-channel isolated gate driver
* For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
* Up to 6.5 A typical peak output current
.

Application


* UL 1577 certification VISO = 3.0 kV (rms) for 1 min Potential applications
* EV charging
* Energy storage .

Description

The 1ED314xMU12F gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in DSO-8 150 mil package. They provide a typical output current of up to 6.5 A. The input logic pins operate on a wide input vol.

Image gallery

1ED3140MU12F Page 1 1ED3140MU12F Page 2 1ED3140MU12F Page 3

TAGS

1ED3140MU12F
Single-channel
3kV
rms
isolated
gate
driver
1ED3141MU12F
1ED3142MU12F
1ED3120MU12H
Infineon

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts