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1ED3141MU12F - Single-channel 3kV (rms) isolated gate driver

Download the 1ED3141MU12F datasheet PDF (1ED3140MU12F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for single-channel 3kv (rms) isolated gate driver.

Description

The EiceDRIVER™ 1ED314xMx12x gate driver ICs are high-performance galvanically isolated single-channel gate drivers designed for driving IGBTs, MOSFETs and SiC MOSFETs.

The gate driver ICs are available in a 150-mil, 8-pin package (1ED314xMU12F) and a 300-mil, 8-pin package (1ED314xMC12H).

Features

  • Single-channel galvanically isolated coreless transformer based gate driver.
  • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options.
  • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs.
  • Up to 6.5 A typical peak output current.
  • 40 ns propagation delay with 7 ns part-to-part matching (skew).
  • 35 V absolute maximum output supply voltage.
  • Very high (best-in-class) common-mode transient immu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1ED3140MU12F-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1ED3141MU12F
Manufacturer Infineon
File Size 2.05 MB
Description Single-channel 3kV (rms) isolated gate driver
Datasheet download datasheet 1ED3141MU12F Datasheet

📁 Similar Datasheet

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Full PDF Text Transcription

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EiceDRIVER™ 1ED314xMU12F & 1ED314xMC12H (1ED-X3 Compact) Datasheet Single-channel isolated gate driver IC Features • Single-channel galvanically isolated coreless transformer based gate driver • Separate outputs, output UVLO referenced to GND2 or adjustable output UVLO options • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 40 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • Very high (best-in-class) common-mode transient immunity CMTI > 300 kV/µs • Active shutdown and short circuit clamping • 150 mil DSO-8 and 300 mil LDSO-8 packages with CTI > 600 • 3.
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