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NJD1718 - Silicon PNP Power Transistor

General Description

Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -50 V -50 V -5 V -2 A -3 A -0.4 A 15 W 1.