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NJD2873 - Silicon NPN Power Transistor

Description

Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) DC Current Gain -hFE = 120(Min)@ IC= 0.5A High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Total Power Dissipation PC @ TC=25℃ Collector Power Dissipation Ta=25℃ TJ Junction Temperature 2 A 3 A 0.4 A 15 W 1.
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