MMBR931L
DESCRIPTION
- Low Noise Figure
NF = 4.3 d B TYP. @VCE = 1 V, IE = 0.25 m A, f = 1 GHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed primarily for use in low-power amplifiers to 1.0
GHz ,Ideal for pagers and other battery operated systems where power consumption is critical.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC= 75℃
Junction Temperature
5 m A
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1m A ; IB=...
