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MMBR931L Datasheet Silicon NPN RF Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Noise Figure NF = 4.3 dB TYP.

@VCE = 1 V, IE = 0.25 mA, f = 1 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed primarily for use in low-power amplifiers to 1.0 GHz ,Ideal for pagers and other battery operated systems where power consumption is critical.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 10 V VCEO Collector-Emitter Voltage 5 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 5 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L.