MMBR901L transistor equivalent, silicon npn rf transistor.
*Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RA.
*Low Noise
*High Power Gain-
Gpe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS
*Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
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UNIT
VC.
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