MMBR911L transistor equivalent, silicon npn rf transistor.
*Designed for low noise, wide dynamic range front-end
amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=2.
*High Gain
GNF = 17 dB TYP. @ IC= 10 mA, f = 500 MHz
*Low Noise Figure
NF= 1.7dB TYP. @ f= 500 MHz
*High Current-Gain Bandwidth Product
fT = 6.0 GHz TYP. @ IC= 30 mA
APPLICATIONS
*Designed for low noise, wide dynamic range front-end
a.
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