MJE3055AT transistor equivalent, silicon npn power transistor.
*Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
*High DC Current Gain-
: hFE= 150-260@IC= 1A
*Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 mA
*Minimum Lot-to-Lot variations for robust device
performance and reliable operat.
Image gallery
TAGS
Download (Size : 213.97KB)