MJE3055A transistors equivalent, complementary silicon power transistors.
Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc.
DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe .
The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
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