MJE13007A transistor equivalent, silicon npn power transistor.
*Designed for use in high-voltage, high-speed.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VC.
*Collector
–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
*Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
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