MJD148 transistor equivalent, silicon npn power transistor.
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
*Designed for u.
*DC Current Gain-
: hFE = 85(Min) @ IC= 0.5A
*Low Collector Saturation Voltage-
: VCE(sat) = 0.5V(Max.)@ IC= 2A
*DPAK for Surface Mount Applications
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation A.
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