MJD112 transistor equivalent, silicon npn power transistor.
NO suffix)
*Straight lead(IPAK,“－I”suffix)
*Built-in a damper diode at E-C
*100% avalanche tested
*Minim.
*High DC current gain
*Lead formed for surface mount applications(NO suffix)
*Straight lead(IPAK,“－I”suffix)
*Built-in a damper diode at E-C
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance a.
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