MJD127 transistor equivalent, silicon pnp darlington power transistor.
*High DC current gain
*100% tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable.
*Low Collector-Emitter saturation voltage
*Lead formed for surface mount applications
*High DC current gain
*100% tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Design.
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