MJ10003 transistor equivalent, silicon npn darlington power transistor.
Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are part.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.)
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS Designed for high voltage, high speed , power switchin.
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