MJ1000 transistor equivalent, npn transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
*Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device
performanc.
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