IRF730FI transistor equivalent, n-channel mosfet transistor.
*Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC an.
*Drain Current
–ID=3.5A@ TC=25℃
*Drain Source Voltage-
: VDSS= 400V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance .
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