IRF730
IRF730 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
Features
With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source
D=5.5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING UNIT
VDSS
Drain-source voltage (VGS=0)
400 V
VGS Gate-source voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj
Max. Operating Junction temperature
Tstg Storage temperature
-65~150
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25m A
VGS(TH) Gate threshold voltage
VDS= VGS; ID=0.25m A
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=3.3A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS Zero gate voltage drain current VDS=400V; VGS=0
VSD Diode forward voltage
IF=5.5A; VGS=0
TO-220
MIN MAX UNIT
400 V 2 4V 1.0 100 n A 25 u A 1.6...
