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IRF730 - N-Channel MOSFET Transistor

Key Features

  • With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET IRF730 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A ‹ Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate-source voltage 20 ID Drain Current-continuous@ TC=25 5.5 Ptot Total Dissipation@TC=25 74 Tj Max. Operating Junction temperature 150 V A W Tstg Storage temperature -65~150 ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=0.25mA RDS(ON) Drain-source on-stage resistance VGS=10V; ID=3.