FRK250 transistor equivalent, n-channel mosfet transistor.
It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. De.
*27A, 200V, RDS(on) = 0.1Ω
*Second Generation Rad Hard MOSFET Results
From New Design Concepts
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS It is specially designed and processed to exh.
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