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FRK250 - N-Channel MOSFET Transistor

Description

27A, 200V, RDS(on) = 0.1Ω Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FRK250 DESCRIPTION ·27A, 200V, RDS(on) = 0.1Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 27 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
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