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FRK254D - N-Channel Power MOSFET

General Description

The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Key Features

  • 20A, 250V, RDS(on) = 0.170Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2.
  • Gamma Dot.

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Other Datasheets by Intersil (Renesas)

Part Number Description
FRK254H N-Channel Power MOSFET
FRK254R N-Channel Power MOSFET
FRK250D N-Channel Power MOSFET
FRK250H N-Channel Power MOSFET
FRK250R N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FRK254D, FRK254R, FRK254H June 1998 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features • 20A, 250V, RDS(on) = 0.170Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 15.