D1517 transistor equivalent, silicon npn power transistor.
*Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO.
*Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A
*Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min)
*Good Linearity of hFE
*High Speed Switching
APPLICATIONS
*Designed for power amplifier,power switching app.
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