Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3694
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL P
ARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=8A; IB=0.8A;L=1mH 60
VCE(sat)1 Collector-emitter saturation voltage IC=8A ; IB=0.4A
VCE(sat)2
VBE(sat)1
Collector-emitter saturation voltage IC=12A ; IB=0.6A
Base-emitter saturation voltage
IC=8A ; IB=0.4A
VBE(sat)2 Base-emitter saturation voltage
IC=12A ; IB=0.6A
ICBO Collector cut-off current
ICER Collector cut-off current
VCB=60V;IE=0
VCB=60V;RBE=50Ω;Ta=125°C
ICEX1
Collector cut-off current
VCB=60V; VBE=-1.5V
ICEX2
IEBO
Collector cut-off current
Emitter cut-off current
VCB=60V; VBE=-1.5V;Ta=125°C
VEB=5V;IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=2V 100
hFE-2
hFE-3
DC current gain
DC current gain
IC=3.0A ; VCE=2V
IC=8.0A ; VCE=2V 60
Cob Coll ector capacitance
VCB=10V;IE=0;f=1.0MHz
fT T ransition frequency
Switching times
IC=1.5A ; VCE=10V
ton T
ts S
tf Fall
urn-on time
torage time
time
IC=8.0A; IB1=-IB2=0.4A
VCC=50V ,RL=6.3
MIN TYP. MAX UNIT
V
0.3 V
0.5 V
1.2 V
1.5 V
10 A
1.0 mA
10 A
1.0 mA
10 A
100 400
180 pF
120 MHz
0.3 s
1.5 s
0.3 s
hFE-2 Classifications
ML K
100-120 150-300 200-400
2
Free Datasheet http://www.datasheet4u.com/
