SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=6A; IB=0.6A,L=1mH
VCEsat-1 Collector-emitter saturation voltage IC=6A; IB=0.3A
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.4A
VBEsat-1 Base-emitter saturation voltage
IC=6A; IB=0.3A
VBEsat-2 Base-emitter saturation voltage
IC=8A; IB=0.4A
ICBO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCB=60V; IE=0
VCE=60V; VBE=-1.5V
Ta=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
hFE-3
DC current gain
IC=6A ; VCE=2V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IC=1.0A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=6A;RL=8.3D
IB1=-IB2=0.3A
VCCE50V
hFE-2 classifications
ML K
100-200 150-300 200-400
Product Specification
2SC3693
MIN TYP. MAX UNIT
60 V
0.3 V
0.5 V
1.2 V
1.5 V
10 µA
10 µA
1.0 mA
10 µA
100
100 200 400
60
150 pF
140 MHz
0.3 µs
1.5 µs
0.3 µs
2
