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C3563 - 2SC3563

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) High Switching Speed APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter applications.

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Full PDF Text Transcription (Reference)

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INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 600 V wwwVCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.