INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC3563
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
600 V
wwwVCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 10 A
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
40
W
2
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
