INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3514
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1383
APPLICATIONS
·Adudio frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
180 V
VCEO Collector-Emitter Voltage
180 V
VEBO Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
0.1 A
Collector Power Dissipation@ Ta=25℃
1.5
PC
Collector Power Dissipation@TC=25℃
10
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Website：www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
