C3514
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Good Linearity of hFE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: C3514
- Description: Silicon NPN Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 197.13 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| C3519 | Mospec Semiconductor | 2SC3519 |
| C3518-Z | Renesas | SILICON POWER TRANSISTOR |
| C3515 | Toshiba | 2SC3515 |