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Inchange Semiconductor

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C1061 Datasheet

2SC1061

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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1061
DESCRIPTION
With TO-220 package
Low saturation voltage
Complement to type 2SA671
Note: type 2SC1060 with short pin
APPLICATIONS
For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
固电半导体Absolute maximum ratings (Ta=25 )
INCHANGE SEMICONDUCTORSYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
CONDITIONS
Open emitter
Open base
Open collector
VALUE
50
50
4
3
UNIT
V
V
V
A
ICM Collector current-peak
8A
IB Base current (DC)
0.5 A
PC Collector power dissipation
TC=25
25 W
Tj Junction temperature
150
Tstg Storage temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to case
MAX
5.0
UNIT
/W
Datasheet pdf - http://www.DataSheet4U.net/




Inchange Semiconductor

C1061 Datasheet Preview

C1061 Datasheet

2SC1061

No Preview Available !

www.DataSheet.co.kr
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
50
V
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
50
V
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
4
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
1.0 V
VBE Base-emitter on voltage
IC=1A ; VCE=4V
1.5 V
ICBO Collector cut-off current
VCB=25V;IE=0
0.1 mA
IEBO Emitter cut-off current
VEB=4V; IC=0
0.1 mA
hFE-1
DC current gain
IC=0.1A ; VCE=4V
35
hFE-2
固电半导体fT
DC current gain
Transition frequency
IC=1A ; VCE=4V
IC=0.5A ; VCE=4V
INCHANGE SEMICONDUCTOR‹ hFE-2 classifications
ABC
D
35-70 60-120 100-200 160-320
35 320
5.0 MHz
2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number C1061
Description 2SC1061
Maker Inchange Semiconductor
Total Page 4 Pages
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