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Inchange Semiconductor
C106
FEATURES - Glassivated surface for reliability and uniformity - Practical level triggering and holding characteristics - Designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation Is important. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(AV) IT(RMS) PGM PG(AV) ITSM Tj Tstg Repetitive peak off-state voltage Repetitive peak off-state voltage Average on-state current RMS on-state current Peak gate power Average gate power Non-repetitive peak on-state current Operating junction temperature Storage temperature MIN UNIT 400 V 400 V 2.5 A 4A 0.5 W 0.2 W 20 A 125 ℃ -40~+ 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRRM=400V VRRM=400V, Tj=...