BU508AT transistor equivalent, silicon npn power transistor.
*Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
*High Power Dissipation-
: PD= 100W@TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in large sc.
Image gallery
TAGS
Download (Size : 211.12KB)