BU508A Overview
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total...




