BU508A-2 transistor equivalent, silicon npn power transistor.
*Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCE.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
*High Power Dissipation-
: PD= 100W@TC= 25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for horizontal outp.
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