BDY55X - Silicon NPN Power Transistor

Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-100@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching an

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	BDY55X
Manufacturer	Inchange Semiconductor
File Size	207.40 KB
Description	Silicon NPN Power Transistor
Datasheet	BDY55X Datasheet
Additional preview pages of the BDY55X datasheet.

📁 Similar Datasheet

BDY55X - Bipolar NPN Device (Seme LAB)
BDY55 - SILICON POWER TRANSISTOR (SavantIC)
BDY55 - Bipolar NPN Device (Seme LAB)
BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS (Comset Semiconductors)
BDY55 - NPN Transistor (INCHANGE)
BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
BDY54 - Bipolar NPN Device (Seme LAB)
BDY54 - SILICON NPN TRANSISTOR (TT)
BDY54 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
BDY56 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by Inchange Semiconductor

BDY53 - Silicon NPN Power Transistor
BDY54 - Silicon NPN Power Transistor
BDY58S - Silicon NPN Power Transistor
BDY13-6 - Silicon NPN Power Transistor
BDY20 - Silicon NPN Power Transistor
BDY23 - Silicon NPN Power Transistor
BDY24 - Silicon NPN Power Transistor
BDY25B - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor BDY55X DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

Published: Nov 15, 2016 |