BDY55X transistor equivalent, silicon npn power transistor.
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAME.
*Excellent Safe Operating Area
*DC Current Gain-
: hFE=20-100@IC = 4A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATI.
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