BDY55X is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDY55X | Bipolar NPN Device |
SavantIC |
BDY55 | SILICON POWER TRANSISTOR |
|
Seme LAB |
BDY55 | Bipolar NPN Device |
Comset Semiconductors |
BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS |
Inchange Semiconductor |
BDY55 | NPN Transistor |
·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;.
