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BDY55X - Silicon NPN Power Transistor

BDY55X Product details

Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-100@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching an

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Datasheet Details

Part number
BDY55X
Manufacturer
Inchange Semiconductor
File Size
207.40 KB
Datasheet
BDY55X-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BDY55X-like datasheet

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