BD369 transistor equivalent, silicon pnp power transistor.
*Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
.
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A
*DC Current Gain-
: hFE= 20(Min)@IC=-10A
*Excellent Safe Operating Area
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APP.
Image gallery
TAGS
Download (Size : 207.31KB)