3DD325 transistor equivalent, silicon npn power transistor.
*Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max) @IC= 0.5A
APPLICATIONS
*Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO.
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