3DD301C transistor equivalent, silicon power transistor.
*Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 3A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Design.
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