3DD208 transistor equivalent, silicon npn power transistor.
*Designed for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAM.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
*DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
*Minimum Lot-to-Lot variations for robust device
performa.
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