3DD200 transistor equivalent, silicon power transistor.
*Designed for B&W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UN.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*DC Current Gain-
: hFE= 30~120(Min.)@IC= 2A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 3A
*Minimum Lot-to-Lot variations for robust device
performanc.
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