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2SK2115 - N-Channel MOSFET Transistor

Description

Drain Current ID= 5A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) High speed power switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for Switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

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isc N-Channel MOSFET Transistor 2SK2115 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·High speed power switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suitable for Switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulsed Drain Current 20 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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