2SD469 transistor equivalent, silicon npn power transistor.
*Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATIN.
* Low Collector-Emitter Breakdown Voltage
V(BR)CEO= 110V (Min)
*Collector Power Dissipation
*Pc=100W@TC=25℃
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for use in conv.
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