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Renesas Electronics Components Datasheet

2SD467 Datasheet

Silicon NPN Epitaxial

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2SD467
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB561
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0765-0200
(Previous ADE-208-1134)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
www.DataSheet.co.kr
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
25
20
5
0.7
1.0
0.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5
Datasheet pdf - http://www.DataSheet4U.net/


Renesas Electronics Components Datasheet

2SD467 Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SD467
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE*1
Min
25
20
5
85
Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage
VBE
Gain bandwidth product
fT
Collector output capacitance
Cob
Note: 1. The 2SD467 is grouped by hFE as follows.
BC
85 to170
120 to 240
Typ
0.19
0.76
280
12
Max
1.0
240
0.5
1.0
Unit
V
V
V
µA
V
V
MHz
pF
(Ta = 25°C)
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 0.15 A
(Pulse test)
IC = 0.5 A, IB = 0.05 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
VCB = 10 V, IE = 0, f = 1 MHz
www.DataSheet.co.kr
Rev.2.00 Aug 10, 2005 page 2 of 5
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 2SD467
Description Silicon NPN Epitaxial
Maker Renesas
Total Page 6 Pages
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