2SD1763A transistor equivalent, silicon npn power transistor.
*Power amplifier applications.
*Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
*Good Linearity of hFE
*Complement to Type 2SB1186A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power amplifi.
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