2SD1760 transistor equivalent, silicon npn power transistor.
*Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
.
*Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A
*Complements the 2SB1184
*Good Linearity of hFE
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATI.
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