2SD1646 transistor equivalent, power transistor.
*Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
*High DC Current Gain
: hFE= 1000(Min) @IC= 1A
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT.
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