2SD1640 transistor equivalent, silicon npn power transistor.
*Designed for low -frequency output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
VA.
*High DC Current Gain-
: hFE = 4000(Min)@ IC= 1A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
*Minimum Lot-to-Lot variations for robust device
p.
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