2SD1509 transistor equivalent, silicon npn power transistor.
*Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SY.
*High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC=1A
*Minimum Lot-to-Lot variations for robust device
p.
Image gallery
TAGS
Download (Size : 211.85KB)