*Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
*High DC Current Gain : hFE= 1000(Min) @IC= 10A
*Low Saturation Voltage
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*.

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