2SD1475 transistor equivalent, silicon npn transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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