2SD1336 transistor equivalent, power transistor.
*High power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collecto.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High DC Current Gain
: hFE= 1500(Min) @ IC= 5A, VCE= 4V
*High Speed Switching
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION.
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