2SD1309 transistor equivalent, silicon npn darlington power transistor.
*Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
.
*High DC Current Gain
:hFE= 2000(Min) @ IC= 3A
*Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min)
*Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 3A
*Minimum Lot-to-Lot variations for robust device
pe.
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