2SD1269 transistor equivalent, silicon npn transistor.
*Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collecto.
*Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 3A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
*Good Linearity of hFE
*Complement to Type 2SB944
*Minimum Lot-to-Lot variations for robust device
perform.
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