2SD1195 transistor equivalent, silicon npn darlington power transistor.
*Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator applications.
ABSOLUTE MAXIMU.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
*High DC Current Gain
: hFE= 1500(Min) @IC= 2.5A
*Low Saturation Voltage
*Complement to Type 2SB885
*Minimum Lot-to-Lot variations for robust device
performance and relia.
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